| PART |
Description |
Maker |
| MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION
16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K3P5C1000F-DGCTC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3N5C1000E-DGCTC K3N5C1000E-DC120 |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| MX29LV160CTXBI-70 MX29LV160CBXBC-90G MX29LV160CBXB |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
http://
|
| BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
From old datasheet system
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AT49BV160-90CI AT49BV161-70CI AT49BV161-90CI AT49B |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 45PIN |塑料
|
ATM Electronic, Corp.
|
| 29LV017B-70 29LV017B-90 |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1,600位[2Mx8] CMOS单电V时仅闪存
|
Macronix International Co., Ltd.
|
| BS616LV1626TI BS616LV1622TC-55 BS616LV1622TC-70 BS |
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
LM4922 Boomer ® Audio Power Amplifier Series Ground-Referenced, Ultra Low Noise, Fixed Gain, 80mW Stereo Headphone Amplifier; Package: MICRO SMD; No of Pins: 14
LM4921 Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20 非常低功电压CMOS SRAM00万16M × 8位开
LM4921? Low Voltage I 2 S 16-Bit Stereo DAC with Stereo Headphone Power Amplifiers and Volume Control; Package: MICRO SMD; No of Pins: 20
|
Brilliance Semiconducto...
http://
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
